GaN device

 

NXP has more than 30 years of experience in providing RF power transistors, leading the industrial market by supplying GaNRF power devices for wireless infrastructure, ISM (industrial, scientific and medical), and aerospace and defense applications through a safe and reliable mainstream supply chain.

 

NXP's first-generation GaN process technology has first-class linearity, while allowing designers to maintain the existing power consumption, durability and high efficiency characteristics. Therefore, an excellent amplifier design can minimize the number of components and reduce the size of the amplifier. NXP’s leading back-end assembly plant has always been committed to providing high-power-density GaN with smaller circuits and wider frequency bands.

 

NXP has a variety of high-performance GaN and LDMOS product portfolios, which is the best choice to provide you with the right choice to optimize your application design.